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TLV3012 Datasheet(PDF) 25 Page - Texas Instruments |
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TLV3012 Datasheet(HTML) 25 Page - Texas Instruments |
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25 / 39 page ![]() 10.2.1.2 Detailed Design Procedure Configure the circuit as shown in Figure 10-3. Connect (V+) to VBAT which also powers the microcontroller. Resistors R1 and R2 create the under-voltage alert level of 2.0 V. When the battery voltage sags down to 2.0 V, the resistor divider voltage crosses VREF, the 1.242 V reference threshold of the TLV3012-Q1. This causes the comparator output to transition from a logic high to a logic low. The push-pull output of the TLV3012-Q1 is selected since the comparator operating voltage is shared with the microcontroller which is receiving the under-voltage alert signal. Equation 2 is derived from the analysis of Figure 10-3. (2) where • R1 and R2 are the resistor values for the resistor divider connected to IN+ • VBAT is the voltage source that is being monitored for an undervoltage condition. • VREF is the falling edge threshold where the comparator output changes state from high to low Rearranging Equation 2 and solving for R1 yields Equation 3. (3) For the specific undervoltage detection of 2.0 V using the TLV3012-Q1, the following results are calculated. (4) where • R2 is set to 1 MΩ • VBAT is set to 2.0 V • VREF is set to1.242 V Choose RTOTAL (R1 + R2) such that the current through the divider is at least 100 times higher than the input bias current (IBIAS). The resistors can have high values to minimize current consumption in the circuit without adding significant error to the resistive divider. www.ti.com TLV3011-Q1, TLV3012-Q1, TLV3011B-Q1, TLV3012B-Q1 SBOS551C – MARCH 2011 – REVISED APRIL 2023 Copyright © 2023 Texas Instruments Incorporated Submit Document Feedback 25 Product Folder Links: TLV3011-Q1 TLV3012-Q1 TLV3011B-Q1 TLV3012B-Q1 |
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