CEPF634/CEBF634

CEIF634/CEFF634

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM e

250

0.59

74

32

8.1

±20

V

W

A

A

V

W/ C

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

VDSS

RDS(ON)

ID

@VGS

CEPF634

CEIF634

250V

250V

0.45Ω

0.45Ω

8.1A

8.1A

10V

10V

0.3

38

32 d

8.1 d

CEBF634

250V

0.45Ω

8.1A

10V

Lead free product is acquired.

CEFF634

250V

0.45Ω

8.1A d

10V

S

D

G

CEI SERIES

TO-262(I2-PAK)

TO-220/263/262

TO-220F

Details are subject to change without notice .

http://www.cet-mos.com

Rev 2. 2010.June

1

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

A

5.1

5.1 d

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

C/W

62.5

1.7

RθJC

RθJA

3.3

65