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KSC5338D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza KSC5338D
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSC5338D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
KSC5338D
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
VCEO: 450V(Min)
·
Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max.)@ IC= 0.8A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
PC
Total Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.65
℃
/W


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