BAS101S datasheet(5/11 Pages) NEXPERIA

No. de pieza	BAS101S

Descripción Electrónicos	High-voltage switching diodes

PDF	11 Pages

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Fabricante Electrónico	NEXPERIA [Nexperia B.V. All rights reserved]

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5 / 11 page

BAS101_BAS101S

Product data sheet

Rev. 02 — 14 December 2009

5 of 11

Nexperia

BAS101; BAS101S

High-voltage switching diodes

(1) Tamb = 150 °C

(2) Tamb =75 °C

(3) Tamb =25 °C

Based on square wave currents

Tj =25 °C; prior to surge

Fig 1.

Forward current as a function of forward

voltage; typical values

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration; maximum values

VR = 300 V

f = 1 MHz; Tamb =25 °C

Fig 3.

Reverse current as a function of junction

temperature; typical values

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

0.5

1.5

(mA)

VF (V)

500

400

300

200

100

mhc618

(2)

(1)

(3)

mbg703

102

IFSM

(A)

10−1

tp (μs)

1104

103

102

200

120

(

μA)

160

Tj (°C)

102

10−1

10−2

mhc619

010

0.42

0.3

0.34

0.38

(pF)

VR (V)

mhc621

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