Nexperia

BAS321-Q

General purpose diode

mbg447

0

4

8

6

2

VR (V)

1.0

0.8

0.2

0.6

0.4

Cd

(pF)

f = 1 MHz

Tj = 25 °C.

Fig. 5. Diode capacitance as a function of reverse

voltage; typical values.

0

50

100

200

Tamb (°C)

VR

(V)

300

0

100

200

150

mbk926

Fig. 6. Maximum permissible continuous reverse

voltage as a function of the ambient

temperature

11. Test information

trr

(1)

+ IF

t

output signal

tr

tp

t

10 %

90 %

VR

input signal

V = VR + IF × RS

RS = 50 Ω

IF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

(1) IR = 3 mA

Fig. 7. Reverse recovery time test circuit and waveforms

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

BAS321-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2021. All rights reserved

Product data sheet

2 June 2021

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