Nexperia

BAS16H

High-speed switching diode

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAS16H

SOD123F

plastic, surface-mounted package; 2 leads; 2.6 mm x 1.6

mm x 1.1 mm body

SOD123F

7. Marking

Table 4. Marking codes

Type number

Marking code

BAS16H

A1

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak reverse

voltage

-

100

V

VR

reverse voltage

-

100

V

IF

forward current

[1]

-

215

mA

tp = 1 µs; square wave; Tj(init) = 25 °C

-

4

A

tp = 1 ms; square wave; Tj(init) = 25 °C

-

1

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave; Tj(init) = 25 °C

-

0.5

A

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ ≤ 0.25

-

500

mA

[1]

-

380

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

830

mW

Per device

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB with 60 µm copper strip line.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².

BAS16H

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Nexperia B.V. 2022. All rights reserved

Product data sheet

1 October 2022

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