4

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

Safe Operating Area

0.001

0.0

0.2

0.6

1.0

0.4

0.8

1.2

0.01

1

0.1

10

100

T

J = 150 °C

T

J = 25 °C

V

SD - Source-to-Drain Voltage (V)

- 0.2

- 50

- 25

25

75

125

0

50

100

150

175

- 0.1

0.1

0.0

0.2

0.3

0.4

T

J - Junction Temperature (°C)

I

D = 5 mA

I

D = 250 μA

0.00

01

3

24

5

0.20

0.15

0.10

0.05

0.25

VGS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

-

26.0

- 50

- 25

25

75

125

0

50

100

175

150

-

25.5

-

24.5

-

24.0

-

25.0

-

23.5

-

23.0

T

J - Junction Temperature (°C)

I

D = 1 mA

0.01

0.01

0.1

1

100

20

0.1

1

10

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

I

DM Limited

BVDSS Limited

T

C = 25 °C

Single Pulse

Limited by R

DS(on)*

1 ms

10 ms

1 s, 10 s, DC

100 ms

100 μs

VB2240

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