Nexperia

BAT54SW

Schottky barrier diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 0.1 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

240

mV

IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

320

mV

IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

400

mV

IF = 30 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

500

mV

VF

forward voltage

IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

800

mV

IR

reverse current

VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

2

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; Tamb = 25 °C

-

-

10

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;

RL = 100 Ω; Tamb = 25 °C

-

-

5

ns

006aac829

VF (V)

0.0

1.2

0.8

0.4

1

10

102

103

IF

(mA)

10-1

(1)

(1)

(2)

(2)

(3)

(3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

aaa-004515

VR (V)

0

30

20

10

1

10

102

103

IR

(µA)

10-1

(1)

(2)

(3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAT54SW

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Product data sheet

1 April 2023

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