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BAS101S Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS101S Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 11 page ![]() BAS101_BAS101S_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 8 September 2006 4 of 11 Philips Semiconductors BAS101; BAS101S High-voltage switching diodes 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF = 100 mA [1] - - 1.1 V IR reverse current VR = 250 V - - 150 nA VR = 250 V; Tj = 150 °C - - 100 µA Cd diode capacitance VR =0V; f=1MHz - - 2 pF trr reverse recovery time [2] - - 50 ns |
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