BAS28

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© Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 22 July 2010

4 of 12

Nexperia

BAS28

High-speed double diode

7.

Characteristics

[1] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

[2] When switched from IF =10mA; tr =20ns.

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VF

forward voltage

IF = 1 mA

-

-

715

mV

IF = 10 mA

-

-

855

mV

IF = 50 mA

--1

V

IF = 150 mA

--1.25

V

IR

reverse current

VR = 25 V

--30

nA

VR = 75 V

--1

μ

A

VR =25V; Tj =150 °C

--30

μ

A

VR =75V; Tj =150 °C

--50

μ

A

Cd

diode capacitance

f = 1 MHz; VR = 0 V

--1.5

pF

trr

reverse recovery time

[1] --4

ns

VFR

forward recovery voltage

[2] --1.75 V

(1) Tj = 150 °C; typical values

(2) Tj =25 °C; typical values

(3) Tj =25 °C; maximum values

Based on square wave currents.

Tj =25 °C; prior to surge

Fig 1.

Forward current as a function of forward

voltage

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration; maximum values

02

300

IF

(mA)

0

100

200

mbg382

1

VF (V)

(1)

(2)

(3)

mbg704

10

1

102

IFSM

(A)

10−1

tp (μs)

1104

103

10

102