Nexperia

BAS521

Single high-voltage switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating Sytem (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

300

V

VR

reverse voltage

Tj = 25 °C

-

300

V

IF

forward current

Tsp ≤ 90 °C

[1]

-

250

mA

IFSM

non-repetitive peak

forward current

tp = 1 µs; square wave

[2]

-

4.5

A

IFRM

repetitive peak forward

current

tp = 1 ms; δ = 0.25

-

1

A

Ptot

total power dissipation

Tsp ≤ 90 °C

[1] [3]

-

500

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Tsp is the solder point temperature at the soldering point of the cathode tab.

[2] Tj = 25 °C prior to surge.

[3] Reflow soldering is the only recommended soldering method.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

In free air

[1] [2] -

-

500

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

[3]

-

-

120

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Soldering point of cathode tab.

BAS521

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© Nexperia B.V. 2018. All rights reserved

Product data sheet

29 June 2018

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