September 1995

2

Philips Semiconductors

Product specification

NPN 1 GHz wideband transistor

BFS17

DESCRIPTION

NPN transistor in a plastic SOT23 package.

APPLICATIONS

• A wide range of RF applications such as:

– Mixers and oscillators in TV tuners

– RF communications equipment.

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 SOT23.

Marking code: E1p.

handbook, halfpage

MSB003

Top view

12

3

QUICK REFERENCED DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note to the Quick reference data and the Limiting values

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

collector-base voltage

open emitter

−

25

V

collector-emitter voltage

open base

−

15

V

DC collector current

−

25

mA

total power dissipation

−

300

mW

transition frequency

−

GHz

F

noise figure

4.5

−

dB

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

25

V

collector-emitter voltage

open base

−

15

V

emitter-base voltage

open collector

−

2.5

V

DC collector current

−

25

mA

peak collector current

−

50

mA

total power dissipation

−

300

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C