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BFS505 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BFS505
Descripción Electrónicos  NPN 9 GHz wideband transistor
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFS505 Datasheet(HTML) 3 Page - NXP Semiconductors

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September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE =0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
18
mA
Ptot
total power dissipation
up to Ts = 147 °C; note 1
−
150
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 147 °C; note 1
190 K/W



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