Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 5 February 2006

AP502

UMTS-band 4W HBT Amplifier Module

Product Information

The Communications Edge

TM

Product Features

@ 25 dBm wCDMA linear power

Applications

PA mobile infrastructure

Product Description

The AP502 is a high dynamic range power amplifier in a

RoHS-compliant flange-mount package.

The multi-stage

amplifier module has 30 dB gain, while being able to achieve

high performance for PCS-band applications with +36 dBm

of compressed 1dB power. The module has been internally

optimized for driver applications provide -55 dBc ACLR at

25 for wCDMA applications. The module can be biased

down for current when higher efficiency is required.

The AP502 uses a high reliability InGaP/GaAs HBT process

technology and does not require any external matching

components. The module operates off a +12V supply and

does not requiring any negative biasing voltages; an internal

active bias allows the amplifier to maintain high linearity

over temperature. It has the added feature of a +5V power

down control pin. A low-cost metal housing allows the

device to have a low thermal resistance to ensure long

lifetimes. All devices are 100% RF and DC tested.

The AP502 is targeted for use as a driver or final stage amplifier

in wireless infrastructure where high linearity and high power is

required. This combination makes the device an excellent

candidate for next generation multi-carrier 3G base stations.

Functional Diagram

Top View

Pin No.

Function

1

RF Output

2 / 4

Vcc

3 / 5

Vpd

6

RF Input

Case

Ground

Specifications

Parameter

Units Min Typ Max

Operational Bandwidth

MHz

2110 – 2170

Test Frequency

MHz

2140

Power Gain

dB

28.5

30

34.5

dBc

-55

-50

-68

-53

Input Return Loss

dB

11

Output Return Loss

dB

5.3

Output P1dB

dBm

+36

Output IP3

dBm

+52

Operating Current @ 25 dBm

mA

790

840

940

Quiescent Current, Icq

mA

780

820

920

Device Voltage, Vcc

V

+12

V

+5

Load Stability

VSWR

10:1

1. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.

2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±10 MHz offset.

3. Pull-down voltage: 0V = “OFF”, 5V=”ON”

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

°C

Storage Temperature

-55 to +150

°C

RF Input Power (continuous)

with output terminated in 50 Ω

+15 dBm

Operation of this device above any of these parameters may cause permanent damage.

Parameter

Units Config1 Config2

Operating Current @ 25 dBm

mA

840

420

Quiescent Current, Icq

mA

820

250

Device Voltage, Vcc

V

+12

+12

R7 value

Ω

0

730

Test Frequency

MHz

2140

2140

Power Gain

dB

30

27.7

dBc

-55

-47.5

Input Return Loss

dB

11

10

Output Return Loss

dB

5.3

7

Output P1dB

dBm

+36

+36

Output IP3

dBm

+52

+50

4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.

Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.

Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.

Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.

Ordering Information

Part No.

Description

AP502

UMTS-band 4W HBT Amplifier Module

AP502-PCB

Fully-Assembled Evaluation Board

(Class AB configuration, Icq=820mA)

1 2 3

4 5 6