START620 datasheet(1/5 Pages) STMICROELECTRONICS

No. de pieza	START620

Descripción Electrónicos	NPN SiGe RF Transistor

PDF	5 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

May, 3 2002

START620

NPN SiGe RF Transistor

SOT343 (SC70)

ORDER CODE

START620TR

BRANDING

620

APPLICATIONS

• LNA FOR GSM/DCS, CDMA, WCDMA,

BLUETOOTH

• GENERAL PURPOSE 500MHz-5GHz

• LOW NOISE FIGURE: NFmin = 0.8dB

@ 1.8GHz, 5mA, 2V

• COMPRESSION P1dB = 13dBm

@ 1.8GHz, 20mA, 2V

• ULTRA MINIATURE SOT343 PACKAGE

DESCRIPTION

The START620 is a member of the START family

that provide market with the state of the art of RF

silicon process. It uses ST’s Silicon Germanium

technology. This technology offers ft’s of up to

45GHz and Fmax’s of over 60GHz. The START620

offers the best mix of gain and NF for given

breakdown voltage(BVceo = 3.3V).

It reaches performance level only achieved with

GaAs products before.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Vceo

Collector emitter voltage

3.3

V

Vcbo

Collector base voltage

10

V

Vebo

Emitter base voltage

1.5

V

Ic

Collector current

40

mA

Ib

Base current

4

mA

Ptot

Total dissipation, Ts = 101

135

mW

Tstg

Storage temperature

-65 to 150

oC

Tj

Max. operating junction temperature

150

oC

Rthjs

Thermal Resistance Junction soldering point

270

oC/W

ABSOLUTE MAXIMUM RATINGS

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