BLF521 datasheet(4/14 Pages) PHILIPS

4 / 14 page

November 1992

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF521

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 3 mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 12.5 V

−−

µA

IGSS

gate-source leakage current

±VGS = 20 V; VDS =0

−−

µA

VGS(th)

gate-source threshold voltage

ID = 3 mA; VDS =10V

−

4.5

gfs

forward transconductance

ID = 0.3 A; VDS = 10 V

135

−

RDS(on)

drain-source on-state resistance

ID = 0.3 A; VGS =15V

−

3.5

Ω

IDSX

on-state drain current

VGS = 15 V; VDS =10V

−

1.3

−

Cis

input capacitance

VGS =0;VDS = 12.5 V; f = 1 MHz

−

5.3

−

Cos

output capacitance

VGS =0;VDS = 12.5 V; f = 1 MHz

−

7.8

−

Crs

feedback capacitance

VGS =0;VDS = 12.5 V; f = 1 MHz

−

1.8

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS =10V.

handbook, halfpage

−5

MDA485

ID (A)

T.C

(mV/K)

102

103

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS =10V; Tj =25 °C.

handbook, halfpage

1600

1200

400

800

812

MDA484

(mA)

VGS (V)

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