September 1992

2

Philips Semiconductors

Product specification

UHF power MOS transistor

BLF522

FEATURES

• High power gain

• Easy power control

• Gold metallization

• Good thermal stability

• Withstands full load mismatch

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for communications

transmitter applications in the UHF

frequency range.

The transistor is encapsulated in a

6-lead, SOT171 flange envelope, with

a ceramic cap. All leads are isolated

from the flange.

PINNING - SOT171

PIN

DESCRIPTION

1

source

2

source

3

gate

4

drain

5

source

6

source

PIN CONFIGURATION

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

halfpage

MBA931 - 1

1

3

5

2

4

6

Top view

s

d

g

MBB072

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

GP

(dB)

(%)

CW, class-B

500

12.5

5

> 10

> 50