2004 Dec 06

3

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BCV29; BCV49

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BCV29

−

40

V

BCV49

−

80

V

VCES

collector-emitter voltage

VBE = 0 V

BCV29

−

30

V

BCV49

−

60

V

VEBO

emitter-base voltage

open collector

−

10

V

IC

collector current (DC)

−

500

mA

ICM

peak collector current

−

1

A

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1 −

1.3

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

96

K/W

Rth(j-s)

thermal resistance from junction to soldering point

16

K/W