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BLW97 Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza BLW97
Descripción Electrónicos  HF power transistor
PDF  11 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLW97 Datasheet(HTML) 6 Page - NXP Semiconductors

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August 1986
6
Philips Semiconductors
Product specification
HF power transistor
BLW97
APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier).
VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz.
Note
1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
OUTPUT POWER
Gp
ηdt
IC
d3(1)
d5(1)
IC(ZS)
WdB
%
A
dB
dB
A
175 (PEP)
>
11,5
>
40
<
7,8
<−30
<−30
0,1
typ. 13,0
typ. 50
typ. 6,3
typ.
−34
typ.
−38
Fig.8 Class-AB (s.s.b.) test circuit.
handbook, full pagewidth
50
Ω
MGP709
L2
L1
R1
R2
C5
L5
L4
T.U.T.
C6
L3
C11
C14
C10
C2
C1
C4
C7
C8
C9
R3
C3
VCC
VBB
C12
C13
50
Ω



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