NTJS3151P datasheet(3/6 Pages) ONSEMI

No. de pieza	NTJS3151P

Descripción Electrónicos	Trench Power MOSFET 12 V, 3.3 A, Single P?묬hannel, ESD Protected SC??8

PDF	6 Pages

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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NTJS3151P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−2 V

125°C

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

1.5

0.5

4.5

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

1000

100

Figure 3. On−Resistance vs. Drain Current and

Temperature

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.5

3.5

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

−25

1.0

0.8

0.6

0.4

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

100000

TJ = −55°C

VGS = 0 V

0.1

150

TJ = 25°C

ID = −3.3 A

VGS = −4.5 V

25°C

2.0

VGS = −4.5 V

−1.2 V

012

−1.4 V

−1.6 V

−2.4 V

0.075

0.05

10000

1.5

2.5

7.5

0.025

VGS = −4.5 V

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

0.2

−ID, DRAIN CURRENT (AMPS)

0.5

VGS = −4.5 V

0.1

0.4

VGS = −2.5 V

0.3

TJ = 125°C

TJ = −55°C

0.2

TJ = 25°C

VGS = −1.8 V

1.8

1.6

1.4

1.2

TJ = 125°C

TJ = 150°C

2.5

VDS ≤ −12 V

VGS = −3.4 V

3.5

6.5

4.5

5.5

0.5

3.5

1.5

2.5

7.5

6.5

4.5

5.5

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