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2

Rev. 2, 2022-02-25

CAS480M12HM3

4600 Silicon Dr., Durham, NC 27703

MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)

Symbol Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

V(BR)DSS Drain-Source Breakdown Voltage

1200

V

VGS= 0 V, TVJ = -40 °C

VGS(th)

Gate Threshold Voltage

1.8

2.5

3.6

VDS = VGS, ID = 160 mA

2.0

VDS = VGS, ID = 160 mA, TVJ = 175 °C

IDSS

Zero Gate Voltage Drain Current

10

280

μA VGS=0V,VDS=1200V

IGSS

Gate-Source Leakage Current

0.1

2

VGS = 15 V, VDS = 0 V

R

DS(on)

Drain-Source On-State Resistance

(Devices Only)

2.29

2.97

mΩ

VGS = 15 V, ID = 480 A

Fig. 2

Fig. 3

3.66

VGS = 15 V, ID = 480 A, TVJ = 175 °C

gfs

Transconductance

356

S

VDS = 20 V, IDS = 480 A

Fig. 4

345

VDS = 20 V, IDS = 480 A, TVJ = 175 °C

EOn

Turn-On Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

11.3

9.6

9.9

mJ

VDS = 600 V,

ID = 500 A,

VGS = -4 V/15 V,

RG(ext) = 1.0 Ω,

L = 13.7

μH

Fig. 11

Fig. 13

EOff

Turn-Off Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

7.2

7.3

7.4

RG(int)

Internal Gate Resistance

0.8

Ω

VAC = 25 mV, f = 100 kHz

Ciss

Input Capacitance

43.1

nF

VGS = 0 V, VDS = 800 V,

VAC = 25 mV, f = 100 kHz

Fig. 9

Coss

Output Capacitance

2.76

Crss

Reverse Transfer Capacitance

70.7

pF

QGS

Gate to Source Charge

448

nC

VDS = 800 V, VGS = -4 V/15 V

ID = 480 A

Per IEC60747-8-4 pg 21

QGD

Gate to Drain Charge

539

QG

Total Gate Charge

1590

RthJC

FET Thermal Resistance, Junction to Case

0.1

0.115

°C/W

Fig. 17

Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)

Symbol Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

VF

Diode Forward Voltage

1.95

V

VGS = -4 V, IF = 480 A

Fig. 7

3.10

VGS = -4 V, IF = 480 A, TVJ = 175 °C

tRR

Reverse Recovery Time

28

ns

V

GS = -4 V, ISD = 500 A, VR = 600 V

diF/dt = 17 A/ns, TVJ = 175 °C

Fig. 32

QRR

Reverse Recovery Charge

4.5

μC

IRRM

Peak Reverse Recovery Current

270

A

ERR

Diode Energy TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

1.1

1.3

1.5

mJ

VDS = 600 V, ID = 500A,

VGS = -4 V/15 V, RG(ext)= 1.0 Ω,

L = 13.7

μH

Fig. 14

Note 1

RthJC

Diode Thermal Resistance, Junction to Case

0.11

0.13

°C/W

Note 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energy.