GS61008T

Top-side cooled 100 V E-mode GaN transistor

Datasheet

Rev 200402

© 2009-2020 GaN Systems Inc.

9

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Test Circuits

Figure 16: Switching Loss Test Circuit

Application Information

Gate Drive

The recommended gate drive voltage range, VGS, is 0 V to + 6 V for optimal RDS(on) performance. Also, the

repetitive gate to source voltage, maximum rating, VGS(AC), is +7 V to -10 V. The gate can survive non-repetitive

transients up to +10 V and – 20 V for pulses up to 1 µs. These specifications allow designers to easily use 6.0 V

or 6.5 V gate drive settings. At 6 V gate drive voltage, the enhancement mode high electron mobility transistor

(E-HEMT) is fully enhanced and reaches its optimal efficiency point. A 5 V gate drive can be used but may result

in lower operating efficiency. Inherently, GaN Systems E-HEMT do not require negative gate bias to turn off.

Negative gate bias, typically VGS = -3 V, ensures safe operation against the voltage spike on the gate, however it

may increase reverse conduction losses if not driven properly. For more details, please refer to the gate driver

application note "GN001 How to Drive GaN Enhancement Mode Power Switching Transistors” at

www.gansystems.com

Similar to a silicon MOSFET, the external gate resistor can be used to control the switching speed and slew rate.

Adjusting the resistor to achieve the desired slew rate may be needed. Lower turn-off gate resistance, RG(OFF) is

recommended for better immunity to cross conduction. Please see the gate driver application note (GN001) for

more details.

A standard MOSFET driver can be used as long as it supports 6V for gate drive and the UVLO is suitable for 6V

operation. Gate drivers with low impedance and high peak current are recommended for fast switching speed.

GaN Systems E-HEMTs have significantly lower QG when compared to equally sized RDS(on) MOSFETs, so high

speed can be reached with smaller and lower cost gate drivers.