GS66516T

Top-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 210727

© 2009-2021 GaN Systems Inc.

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Electrical Characteristics (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Drain-to-Source Blocking Voltage

V(BL)DSS

650

V

VGS = 0 V, IDSS = 100 µA

Drain-to-Source On Resistance

RDS(on)

25

32

mΩ

VGS = 6 V, TJ = 25 °C

IDS = 18 A

Drain-to-Source On Resistance

RDS(on)

65

mΩ

VGS = 6 V, TJ = 150 °C

IDS = 18 A

Gate-to-Source Threshold

VGS(th)

1.1

1.7

2.6

V

VDS = VGS

IDS = 14 mA

Gate-to-Source Current

IGS

320

µA

VGS = 6 V, VDS = 0 V

Gate Plateau Voltage

Vplat

3.0

V

VDS = 400 V, IDS = 60 A

Drain-to-Source Leakage Current

IDSS

4

100

µA

VDS = 650 V

VGS = 0 V, TJ = 25 °C

Drain-to-Source Leakage Current

IDSS

800

µA

VDS = 650 V

VGS = 0 V, TJ = 150 °C

Internal Gate Resistance

RG

0.3

Ω

f = 5 MHz, open drain

Input Capacitance

CISS

518

pF

VDS = 400 V

VGS = 0 V

f = 100 kHz

Output Capacitance

COSS

126

pF

Reverse Transfer Capacitance

CRSS

5.9

pF

Effective Output Capacitance

Energy Related (Note 3)

CO(ER)

207

pF

VGS = 0 V

VDS = 0 to 400 V

Effective Output Capacitance

Time Related (Note 4)

CO(TR)

335

pF

Total Gate Charge

QG

14.2

nC

VGS = 0 to 6 V

VDS = 400 V

Gate-to-Source Charge

QGS

3.8

nC

Gate-to-Drain Charge

QGD

5.4

nC

Output Charge

QOSS

134

nC

VGS = 0 V, VDS = 400 V

Reverse Recovery Charge

QRR

0

nC

(3) CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the

stated VDS

(4) CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the

stated VDS.