2004 Apr 07

3

NXP Semiconductors

Product data sheet

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PEMD6; PUMD6

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1.

Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2.

Reflow soldering is the only recommended soldering method.

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

PEMD6

−

plastic surface mounted package; 6 leads

SOT666

PUMD6

−

plastic surface mounted package; 6 leads

SOT363

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

VCBO

collector-base voltage

open emitter

−

50

V

VCEO

collector-emitter voltage

open base

−

50

V

VEBO

emitter-base voltage

open collector

−

5

V

IO

output current (DC)

−

100

mA

ICM

peak collector current

−

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

SOT363

note 1

−

200

mW

SOT666

notes 1 and 2

−

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

SOT363

note 1

−

300

mW

SOT666

notes 1 and 2

−

300

mW