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DPG20C200PB Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza DPG20C200PB
Descripción Electrónicos  Schottky Barrier Rectifier
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

DPG20C200PB Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  DPG20C200PB Datasheet HTML 1Page - Inchange Semiconductor Company Limited DPG20C200PB Datasheet HTML 2Page - Inchange Semiconductor Company Limited DPG20C200PB Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Schottky Barrier Rectifier
DPG20C200PB
www.iscsemi.com
2023-8-18
1
FEATURES
·Multi-layer Metal -Silicon Potential Structure
·Low Leakage Current
·High Current Capability, High Efficiency
·High Junction Temperature Capability
MECHANICAL CHARACTERISTICS
·Low Voltage High Frequency Switching Power Supply
·Low Voltage High Frequency Invers Circuit
·Low Voltage Continued Circuit and Protection Circuit
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
200
V
IF(AV)
Average Rectified Forward Current
10
A
IFSM
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed on rated load
conditions
35
A
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.3
℃
/W


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