BAS70-07S datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	BAS70-07S

Descripción Electrónicos	RF DETECTION DIODE

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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BAS70-07S / BAS70-08S

®

December 2001 - Ed: 2A

RF DETECTION DIODE

s

LOW DIODE CAPACITANCE

s

LOW SERIES INDUCTANCE AND RESISTANCE

s

SURFACE MOUNT PACKAGE

FEATURES AND BENEFITS

Dual and Triple Schottky diode in SOT323-6L

package. This diode is intented to be used in RF

application for signal detection and temperature

compensation.

DESCRIPTION

SOT323-6L

Symbol

Parameter

Value

Unit

VR

Continuous reverse voltage

70

V

IF

Continuous forward current

70

mA

IFRM

Repetitive peak forward current

70

mA

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

1

A

P

Power Dissipation

Ta = 55°C

250

mW

Tstg

Storage temperature range

- 65 to +150

°C

Tj

Maximum junction temperature

150

°C

TL

Maximum temperature for soldering

260

°C

ABSOLUTE RATINGS (limiting values)

1

2

3

6

5

4

BAS70-07S SCHEMATIC DIAGRAM

1

2

3

6

5

4

BAS70-08S SCHEMATIC DIAGRAM

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BAS70-07S Datasheet(PDF) 1 Page - STMicroelectronics

BAS70-07S Datasheet(HTML) 1 Page - STMicroelectronics

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