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MASTERGAN2TR Datasheet(PDF) 19 Page - STMicroelectronics

No. de pieza MASTERGAN2TR
Descripción Electrónicos  High power density 600V Half bridge driver with two enhancement mode GaN HEMT
PDF  29 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MASTERGAN2TR Datasheet(HTML) 19 Page - STMicroelectronics

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6.5
Thermal shutdown
The integrated gate driver has a thermal shutdown protection.
When junction temperature reaches the TTSD temperature threshold, the device turns off both GaN transistors,
leaving the half-bridge in 3-state and signaling the state forcing SD/OD pin low. SD/OD pin is released when
junction temperature is below TTSD-THYS and SD/OD is below VTSD.
GaN are driven again according to inputs when SD/OD rises above Vih.
The thermal smart shutdown system provides the possibility to increase the time constant of the external RC
network (that determines the disable time after the overtemperature event) up to very large values without
delaying the protection.
Figure 28. Thermal shutdown timing waveform
THERMAL SHUTDOWN CIRCUIT
GH/GL
OD gate
(internal)
Fast shut down
the driver outputs are switched off
disable time
SD/OD
TTSD
THYS
TTSD -
Vih
V
0 V
TSD
VOD
TJ
t1
t2
VPU
SD/OD
FROM / TO
CONTROLLER
COD
THERMAL
SHUTDOWN
LOGIC
RON_OD
RPD_SD
ROD_ext
2
1
immediately after overtemperature
MASTERGAN2
Thermal shutdown
DS13597 - Rev 2.0
page 19/29



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