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ISCN459T Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza ISCN459T
Descripción Electrónicos  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN459T Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCN459T Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN459T Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCN459T Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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2
isc N-Channel MOSFET Transistor
ISCN459T
·
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID= 250uA
100
-
-
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 250uA
2.0
-
4.0
V
RDS(ON)
Drain-Source On-stage Resistance
VGS=10V; ID=150A
-
-
2.55
m
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
-
-
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS=0
-
-
10
uA
Ciss
Input Capacitance
VGS = 0V,
VDS = 50V,
f = 1.0MHz
-
7684
-
pF
Coss
Output Capacitance
-
114
-
Crss
Reverse Transfer Capacitance
-
21
-
Qg
Total Gate Charge
VDD = 50V,
ID = 20A,
VGS = 10V
-
106
-
nC
Qgs
Gate-Source Charge
-
24
-
Qgd
Gate-Drain Charge
-
22
-
td(on)
Turn-on Delay Time
VDD = 50V,
ID = 20A,
RG =10Ω
-
28
-
ns
tr
Turn-on Rise Time
-
22
-
td(off)
Turn-off Delay Time
-
52
-
tf
Turn-off Fall Time
-
13
-
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
VGS=0V,IS=20A
-
-
1.2
V
trr
Reverse Recovery Time
VR=50V,IF=20A,
dIF/dt=100A/ms
-
75
-
ns
Qrr
Reverse Recovery Charge
-
120
-
nC



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