STTH3002C datasheet(3/11 Pages) STMICROELECTRONICS

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STTH3002C

Characteristics

3/11

To evaluate the conduction losses use the following equation:

P = 0.69 x IF(AV) + 0.01 IF

(RMS)

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

125

(2)

Forward voltage drop

Tj = 25° C

IF = 15 A

1.05

IF = 30 A

1.18

Tj = 150° C

IF = 15 A

0.75

0.84

IF = 30 A

0.99

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = 200 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 15 A, dIF/dt = 200 A/µs,

VR = 160 V, Tj = 125 °C

67.8

tfr

Forward recovery time

IF = 15 A, dIF/dt = 200 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

110

VFP

Forward recovery voltage

IF = 15 A, dIF/dt = 200 A/µs,

Tj = 25 °C

2.5

Figure 1.

Peak current versus duty cycle

(per diode)

Figure 2.

Forward voltage drop versus

forward current (typical values, per

diode)

100

120

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

I(A)

δ=tp/T

P = 30W

P = 15W

P = 10W

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V(V)

I(A)

T =25°C

T =150°C

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