Nexperia

PMPB07R3EN

30 V, N-channel Trench MOSFET

aaa-032392

VDS (V)

10-1

102

10

1

102

ID

(A)

10-2

10-1

1

10

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

Limit RDSon = VDS/ID

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMPB07R3EN

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Nexperia B.V. 2023. All rights reserved

Product data sheet

18 August 2023

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