MJD340

MJD350

COMPLEMENTARY SILICON POWER TRANSISTORS

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STMicroelectronics PREFERRED

SALESTYPES

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COMPLEMENTARY PNP - NPN DEVICES

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MEDIUM VOLTAGE CAPABILITY

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SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX "T4")

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ELECTRICAL SIMILAR TO MJE340 AND

MJE350

APPLICATIONS

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SOLENOID/RELAY DRIVERS

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GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD340 and MJD350 form complementary

NPN - PNP pairs.

They are manufactured using Medium Voltage

Epitaxial-Planar technology, resulting in a rugged

high performance cost-effective transistor.

®

INTERNAL SCHEMATIC DIAGRAM

September 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

MJD340

PNP

MJD350

Collector-Base Voltage (IE = 0)

300

V

300

V

Emitter-Base Voltage (IC = 0)

3

V

Collector Current

0.5

A

Collector Peak Current (tp = 25

0.75

A

15

W

Storage Temperature

-65 to 150

Max Operating Junction Temperature

150

For PNP types voltage and current values are negative.

DPAK

TO-252

(Suffix "T4")

1

3

1/5