MJE210_03 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

Rthj-case

Thermal Resistance Junction-ambient

Max

Thermal Resistance Junction-case

Max

83.4

8.34

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -40 V

Tcase = 125

-100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -8 V

-100

VCEO(sus)

∗

Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -10 mA

-25

VCE(sat)

∗

Collector-Emitter

Sustaining Voltage

IC = -0.5 A

IB = -50 mA

IC = -2 A

IB = -0.2 A

IC = -5 A

IB = -1 A

-0.3

-0.75

-1.8

VBE(sat)

∗

Base-Emitter on

Voltage

IC = -5 A

IB = -1 A

-2.5

VBE

∗

Base-Emitter on

Voltage

IC =- 2 A

VCE = -1 V

-1.6

hFE

∗

DC Current Gain

IC = -0.5 A

VCE = -1 V

IC = -2 A

VCE = -1 V

IC = -5 A

VCE = -2 V

180

Transistor Frequency

IC = 0.1 A

VCE = 10 V

f = 10 MHz

MHz

CCBO

Collector-base

Capacitance

VCB = -10 V

IE = 0

f = 0.1 MHz

120

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%

MJE210

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