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STB70NH03L Datasheet(PDF) 3 Page - STMicroelectronics |
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STB70NH03L Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STB70NH03L Electrical ratings 3/15 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ)30 V VGS Gate- source Voltage ± 20 V ID (1) 1. Value limited by wire bonding Drain Current (continuous) at TC = 25°C 60 A ID (1) Drain Current (continuous) at TC = 100°C 43 A IDM (2) 2. Pulse width limited by safe oper`ting area Drain Current (pulsed) 240 A PTOT Total Dissipation at TC = 25°C 858 W Derating Factor W/°C EAS (3) 3. Starting TJ = 25 oC, ID = 30A, V DD = 20V Single Pulse Avalanche Energy 300 mJ Tstg Storage Temperature -55 to 175 °C TJ Operating Junction Temperature Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case max 1.87 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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