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SB2202-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza SB2202-TN3-R
Descripción Electrónicos  MEDIUM POWER LOW VOLTAGE TRANSISTOR
PDF  4 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

SB2202-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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SB2202
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-020,A
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Base Current
IB
-0.6
A
DC
IC
-3
Collector Current
PULSE
ICM
-7
A
Tc=25
°C
10
Collector Dissipation
Ta=25
°C
Pc
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Saturation Voltage
VCE(sat)
IC =-2A, IB= -0.2A
-0.3
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = -2A, IB= -0.2A
-1.0
-2.0
V
Collector Cut-Off Current
ICBO
VCB= -30V, IE=0
1
mA
Emitter Cut-Off Current
IEBO
VEB= -3V, IC =0
1
mA
DC Current Gain(Note 1)
hFE1
hFE2
VCE= -2V, IC = -20mA
VCE= -2V, IC = -1A
30
100
200
400
Current Gain Bandwidth Product
fT
VCE= -5V, IC = -0.1A
80
MHz
Output Capacitance
Cob
VCB= -10V, IE=0, f=1MHz
45
pF
Note 1: Pulse test: PW<300
µs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400



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