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2SB857-X-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 2SB857-X-TN3-R
Descripción Electrónicos  SILICON PNP TRANSISTOR
PDF  4 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB857-X-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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2SB857
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R217-206,C
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltages
VCBO
-130
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-4
A
Collector Current (IC Peak)
IC(PEAK)
-8
A
TO-126C
1.5
W
Total Power Dissipation
TO-252
PD
1.9
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-10µA, IE=0
-130
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-50mA, IB=0
-100
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-10µA, IC=0
-5
V
Collector-Emitter Saturation Voltage
*VCE(SAT) IC=-2A, IB=-0.2A
-1
V
Base-Emitter Saturation Voltage
*VBE(ON) VCE=-4V, IC=-1A
-1
V
Collector Cut-off Current
ICBO
VCB=-130V, IC=0
-1
µA
*hFE1
VCE=-4V, IC=-0.1A
35
DC Current Gain
*hFE2
VCE=-4V, IC=-1A
60
320
Transition Frequency
fT
VCE=-4V, IC=-500mA, f=100MHz
15
MHz
Note *Pulse Test: Pulse Width
380
≦
µS, Duty Cycle
2%.
≦
CLASSIFICATION OF hFE2
CLASSIFICATION
B
C
D
RANGE
60 ~ 120
100 ~ 200
160 ~ 320



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