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MMBT5401-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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MMBT5401-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 www.unisonic.com.tw QW-R206-011.C ■ TYPICAL CHARACTERICS Fig.2 DC current Gain Ic,Collector current (mA) 10 2 10 1 10 0 10 3 -10 3 -10 2 -10 1 -10 0 -10 -1 VCE=-5V Fig.3 Base-Emitter on Voltage Base-Emitter voltage (V) 0 -0.2 -0.4 -0.6 -0.8 -1.0 VCE=-5V Fig.4 Saturation voltage Fig.5 Current gain -bandwidth product Fig.1 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB 10 3 10 0 10 1 10 2 VCE=-10V Collector-Base voltage (V) -10 0 0 4 8 12 f=1MHz IE=0 -10 -1 -10 -2 -10 1 -10 2 16 20 -10 1 -10 2 -10 3 -10 0 Ic,Collector current (mA) -10 3 -10 2 -10 1 -10 0 -10 -1 Ic,Collector current (mA) -10 3 -10 2 -10 1 -10 0 -10 -1 -10 0 -10 1 |
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