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BDP948 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDP948 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISB3016 eq BDP948 isc Silicon NPN Power Transistor www.iscsemi.com 2023-10-10 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 5 -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 45 -- V V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA; IE= 0 45 -- V ICBO Collector Cutoff Current VCB =45V; IE= 0 -- 100 nA IEBO Emitter Cutoff Current VEB = 4V; IC= 0 -- 100 nA VCEsat Collector-emitter saturation voltage IC = 2 A, IB = 0.2 A -- 0.5 V VBEsat Base-emitter saturation voltage IC = 2 A, IB = 0.2 A -- 1.3 V hFE DC Current Gain IC= 10mA; VCE= 5V 25 -- hFE DC Current Gain IC= 500mA; VCE= 1V 85 475 hFE DC Current Gain IC= 1A; VCE= 2V 50 -- |
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