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ISCF8010 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza ISCF8010
Descripción Electrónicos  SiC N-Channel MOSFET
PDF  4 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8010 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8010 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8010 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8010 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8010 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISCF8010
eq MSC017SMA120
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.54
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.1mA
1200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 4.5mA
1.9
2.7
--
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 20V; ID=40A
--
17.6
22
mΩ
IGSS
Gate Source Leakage Current
VGS= 20/-10VV; VDS= 0V
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V; VGS = 0V
--
--
100
μA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V; VGS = 0V
Tj=125℃
--
--
500
μA
gfS
Forward Transconductance
VDS= 20V; ID=50A
51
S
EOSS
COSS Stored Energy
VDS= 20V;f = 1.0MHz
141
μJ
RG
Internal Gate Resistance
VAC= 25mV;f = 1.0MHz
3.5
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz
VAC=25mV
--
6378
--
pF
Coss
Output Capacitance
--
245
--
Crss
Reverse Transfer Capacitance
--
15
--
Qg
Total Gate Charge
VDD=800V,
ID= 50A,
VGS= - 5to +20V
--
238
--
nC
Qgs
Gate-Source Charge
--
76.7
--
Qgd
Gate-Drain Charge
--
78.3
--



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