2 / 8 page
4-272
RF2334
Rev A10 030415
Absolute Maximum Ratings
Parameter
Rating
Unit
Input RF Power
+13
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25°C, ICC=65mA
Frequency Range
DC to 6000
MHz
3dB Bandwidth
2.5
GHz
Gain
19.4
dB
Freq=100MHz
18
dB
Freq=1000MHz
16
dB
Freq=2000MHz
14
dB
Freq=3000MHz
13
Freq=4000MHz
Gain Flatness
±2
dB
100MHz to 2000MHz
Noise Figure
4.8
dB
Freq=2000MHz
Input VSWR
2.1:1
In a 50
Ω system, DC to 4000MHz
Output VSWR
1.8:1
In a 50
Ω system, DC to 4000MHz
Output IP3
+33
dBm
Freq=1000MHz±50kHz, PTONE=-10dBm
Output P1dB
+18.5
dBm
Freq=1000MHz
Reverse Isolation
20.5
dB
Freq=2000MHz
Thermal
ICC=65mA, PDISS=300mW (See Note.)
ThetaJC
288
°C/W
Maximum Measured Junction
Temperature
172
°C
TAMB=+85°C, VPIN=4.64V
Mean Time Between Failures
400
years
See Note.
Power Supply
With 22
Ω bias resistor
Device Operating Voltage
4.8
V
At pin 5 with ICC=65mA
Supply Voltage
6.3
V
At evaluation board connector, ICC=65mA
Operating Current
65
68
mA
See note.
Note: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should
be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 68mA over all intended operating
conditions.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Mexican ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
