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REF54300QDR Datasheet(PDF) 25 Page - Texas Instruments

No. de pieza REF54300QDR
Descripción Electrónicos  REF54 0.8 ppm/°C Maximum Drift, 0.11 ppmp-p 1/f Noise, 380 μA Current, Precision Voltage Reference
PDF  31 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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REF54300QDR Datasheet(HTML) 25 Page - Texas Instruments

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9.3 Layout
9.3.1 Layout Guidelines
• Place the power-supply bypass capacitor as close as possible to the supply and ground pins. The
recommended value of this bypass capacitor is from 0.1 μF to 10 μF. If necessary, additional decoupling
capacitance can be added to compensate for noisy or high-impedance power supplies. The smallest
capacitor must be placed closest to the device.
• The output must be decoupled with a 1 μF to 100 μF low ESR (maximum 1 Ω) capacitor.
• Place a 1 μF to 100 μF low leakage noise filtering capacitor between the NR pin and ground.
9.3.2 Layout Example
Figure 9-6. Layout Example for SOIC package
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REF54
SNVSCN7 – NOVEMBER 2023
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