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AM29DL800B Datasheet(PDF) 34 Page - Advanced Micro Devices

No. de pieza AM29DL800B
Descripción Electrónicos  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
PDF  46 Pages
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DL800B Datasheet(HTML) 34 Page - Advanced Micro Devices

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Am29DL800B
21519C4 December 4, 2006
D A TA
SH EET
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
70
90
120
JEDEC
Std
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
45
45
50
ns
tWLAX
tAH
Address Hold Time
Min
45
45
50
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
20
25
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
35
50
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Zero Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1 Programming Operation (Note 2)
Byte
Typ
9
µs
Word
Typ
11
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns



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