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IPZA65R029 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPZA65R029 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISF1077 eq IPZA65R029 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Reduced Switching Losses · Ultra-fast Body Diode · Higher System Efficiency APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Suitable for Soft Switching Topologies Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous@Tc=25℃ 69 A ID Drain Current-Continuous@Tc=100℃ 44 A IDM Drain Current-Single Pulse 304 A PD Total Dissipation @TC=25℃ 305 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.41 ℃ /W |
Número de pieza similar - IPZA65R029 |
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Descripción similar - IPZA65R029 |
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