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Die Size

(Excluding Saw Street)

1500 x 1500

59 x 59

µm

mils

Base Pad Size

Emitter Pad Size

11 x 25

11 x 34

mils

Die Thickness

318 (±25)

12.5 (±1)

µm

mils

Top Metal Composition

Al

Back Metal Composition

Ti/Ni/Ag

PNP Transistor Bare Die - TIP32C

Bipolar Medium Power Transistor in bare die form

Complement to NPN TIP31C



Collector current up to 3A



High switching speed



Improved hFE linearity



Solderable back metal



High Reliability tested grades for Military + Space

Rev 1.0

22/08/23

Features:

Die Dimensions in µm (mils)

1500 (59)

DIE BACK = COLLECTOR

Ordering Information:

The following part suffixes apply:



No suffix - Commercial grade die



“H” – Hi-rel grade die + MIL-STD-38534 Class H LAT



“K” – Hi-rel grade die + MIL-STD-38534 Class K LAT.

LAT = Lot acceptance Test.

For information on Hi-Rel LAT flows please see below.

www.siliconsupplies.com\bare-die-lot-qualification

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

B

E