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C2M0045170D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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C2M0045170D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() ISCF8030 eq C2M0045170D SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 0.1mA 1700 -- -- V VGS(th) Gate Threshold Voltage VDS = 10V, ID = 18mA 2.0 -- 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 20V, ID=50A -- 40 70 mΩ VGS= 20V, ID=50A,TC=25℃ -- 80 -- IGSS Gate Source Leakage Current VGS= 20V, VDS= 0V -- -- 600 nA IDSS Zero Gate Voltage Drain Current VDS = 1700V, VGS = 0V -- 2 100 μA RG Internal Gate Resistance f = 1 MHz, VAC = 25 mV -- 1.3 -- Ω gfs Transconductance VDS= 20 V, IDS= 50 A -- 25 -- S VDS= 20 V, IDS= 50 A, TJ = 150℃ -- 23.5 -- Ciss Input Capacitance VGS = 0V VDS = 1200V, f = 1.0MHz VAC=25mV -- 3455 -- pF Coss Output Capacitance -- 171 -- Crss Reverse Transfer Capacitance -- 7 -- Qg Total Gate Charge VDD=1200V ID= 50A VGS= - 5to +20V -- 43 -- nC Qgs Gate-Source Charge -- 74 -- Qgd Gate-Drain Charge -- 200 -- td(on) Turn-on Delay Time VGS= - 5to +20V ID= 50A VDS=400V Rg=2.5Ω inductive load -- 68 -- ns tr Turn-on Rise Time -- 19 -- td(off) Turn-off Delay Time -- 35 -- tf Turn-off Fall Time -- 19 -- Co(er) Effective OutputCapacitance (Energy Related) VGS = 0 V, VDS = 0... 1200V -- 188 -- pF Co(tr) Effective Output Capacitance (Time Related) -- 255 -- |
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