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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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20ATS12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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20ATS12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Input Rectifier Diode 20ATS12 www.iscsemi.com 1 FEATURES · Very low forward voltage drop · Low forward voltage, high efficiency · Low leakage current APPLICATIONS · Input rectification · Power switching circuits · Output rectifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 1200 V IF(AV) Average Rectified Forward Current 20 A IFSM Non-repetitive Peak Surge Current 300 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.3 ℃ /W TO-220C Package 3 1 2 |
Número de pieza similar - 20ATS12 |
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Descripción similar - 20ATS12 |
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