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PCD3352A Datasheet(PDF) 21 Page - NXP Semiconductors |
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PCD3352A Datasheet(HTML) 21 Page - NXP Semiconductors |
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21 / 36 page ![]() 1999 Oct 28 21 Philips Semiconductors Product specification 8-bit microcontrollers with DTMF generator and 128 bytes EEPROM PCA3351C; 52C; 53C; PCD3351A; 52A; 53A 15 SUMMARY OF DERIVATIVE REGISTERS Table 27 Register map 16 HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, it is good practice to take normal precautions appropriate to handling MOS devices (see “Data Handbook IC14, Section: Handling MOS devices”). 17 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ADDR. (HEX) REGISTER 7 6 5 43210 R/W 00 not used 01 EEPROM Address Register (ADDR) 0 AD6 AD5 AD4 AD3 AD2 AD1 AD0 R/W 02 not used 03 EEPROM Data Register (DATR) D7 D6 D5 D4 D3 D2 D1 D0 R/W 04 EEPROM Control Register (EPCR) STT2 ET21 TF2 EWP MC3 MC2 MC1 0 R/W 05 Timer 2 Reload Register (RELR) R7 R6 R5 R4 R3 R2 R1 R0 R/W 06 Timer 2 Register (T2) T2.7 T2.6 T2.5 T2.4 T2.3 T2.2 T2.1 T2.0 R 07 Test Register (TST) only for test purposes; not to be accessed by the device user 08 to 10 not used 11 High Group Frequency Register (HGF) H7 H6 H5 H4 H3 H2 H1 H0 W 12 Low Group Frequency Register (LGF) L7 L6 L5 L4 L3 L2 L1 L0 W 13 Melody Control Register (MDYCON) 0 0 0 0000 EMO R/W 14 to FF not used SYMBOL PARAMETER MIN. MAX. UNIT VDD supply voltage −0.8 +7.0 V VI all input voltages −0.5 VDD + 0.5 V II DC input current −10 +10 mA IO DC output current −10 +10 mA Ptot total power dissipation − 125 mW PO power dissipation per output − 30 mW ISS ground supply current −50 +50 mA Tstg storage temperature −65 +150 °C Tj operating junction temperature − 90 °C |
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