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AP133 Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza AP133
Descripción Electrónicos  300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
PDF  14 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

AP133 Datasheet(HTML) 4 Page - Diodes Incorporated

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AP133
300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT
LOW DROPOUT LINEAR REGULATOR
AP133 Rev. 2
4 of 14
MAY 2007
www.diodes.com
© Diodes Incorporated
Electrical Characteristics
(TA = 25
oC, VIN = VOUT +1V, CIN = 1uF, COUT = 1uF, VEN = 2V, unless otherwise stated)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IQ
Input Quiescent Current
IOUT = 0~300mA
⎯
40
60
μA
ISHDN
Input Shutdown Current
VEN = 0V, IOUT = 0
⎯
1
μA
ILEAK
Input Leakage Current
VEN = 0V, OUT grounded
⎯
1
μA
VDropout
Dropout Voltage
VOUT ≥ 1.5V, IOUT = 300mA
350
450
mV
VREF
ADJ reference voltage
IOUT= 0
0.8
V
IADJ
ADJ leakage
⎯
1
μA
VOUT
Output Voltage Accuracy
-2
2
%
ΔVOUT /ΔVIN/V Line Regulation
VIN = VOUT +1V to 5.5V,
IOUT = 1mA
0.05
%/V
ΔVOUT /VOUT Load Regulation
IOUT from 1mA to 300mA
-1
1
%
tST
Start-up Time
VEN = 0V to 2.0V, IOUT = 300mA
25
μs
PSRR
PSRR
1kHz, IOUT = 0mA
65
dB
ISHORT
Short-circuit Current
VIN = 5.0V, VOUT < 0.2V
120
mA
ILIMIT
Current limit
VOUT = 3V, ROUT = 3Ω
400 600
mA
VIL
EN Input Logic Low Voltage
0.4
V
VIH
EN Input Logic High Voltage
1.4
V
IEN
EN Input leakage
VEN = 0V or 5.5V
-1
1
μA
TSHDN
Thermal shutdown threshold
145
°C
THYS
Thermal shutdown hysteresis
20
°C
SOT25
197
θJA
Thermal
Resistance
Junction-to-
Ambient
DFN2020-6
136
oC/W
SOT25
45
θJC
Thermal
Resistance
Junction-to-Case DFN2020-6
Device mounted on FR-4
substrate, 1"x1" 1oz copper,
single-sided PCB board
102
oC/W



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