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30APF12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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30APF12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Recovery Rectifier Diode 30APF12 www.iscsemi.com 1 FEATURES · Short reverse recovery time · Low forward voltage drop APPLICATIONS · Inverters、Choppers and Converters · Output Rectifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1200 V IF(AV) Average Rectified Forward Current 30 A IFSM Non-repetitive Peak Surge Current 10 ms sine pulse, rated VRRM applied 350 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.8 ℃ /W |
Número de pieza similar - 30APF12 |
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Descripción similar - 30APF12 |
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