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STTH112U Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STTH112U
Descripción Electrónicos  High voltage ultrafast rectifier
PDF  7 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH112U Datasheet(HTML) 3 Page - STMicroelectronics

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STTH112
Electrical characteristics
3/7
Figure 3.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4,
Lleads = 10mm) (DO-41).
Figure 4.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA).
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 5.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4)(SMB).
Figure 6.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35 µm) (DO-41, SMB).
Figure 7.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMA).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
R
(°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
012
34567
89
10
S(cm²)
DO-41
L
=10mm
leads
SMB
R
(°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S(cm²)
SMA



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