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IXFX40N90P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFX40N90P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1129 eq IXFX40N90P N-Channel Power MOSFET www.iscsemi.com 1 DESCRIPTION · Avalanche Rated · Drain Source Voltage- : VDSS= 900V(Min) · Static Drain-Source On-Resistance : RDS(on) = 230mΩ(Max)@VGS= 10V · 100% avalanche tested APPLICATIONS · High Power Density · Easy to Mount · Space Savings ABSOLUTE MAXIMUM RATINGS(TC=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 960 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.13 ℃ /W TO-247P package |
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